IPSA70R1K2P7SAKMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPSA70R1K2P7SAKMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 700 V; Transistor Application: SWITCHING; No. of Terminals: 3;
Datasheet	IPSA70R1K2P7SAKMA1 Datasheet

NAME	DESCRIPTION
Other Names:	IPSA70R1K2P7S IPSA70R1K2P7SAKMA1-ND 448-IPSA70R1K2P7SAKMA1 SP001664784
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-251
Maximum Pulsed Drain Current (IDM):	9.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	700 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.2 ohm

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