IPU50R3K0CEAKMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPU50R3K0CEAKMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: 3 ohm; No. of Terminals: 3;
Datasheet	IPU50R3K0CEAKMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	18 mJ
Other Names:	2156-IPU50R3K0CEAKMA1 SP001396836 ROCINFIPU50R3K0CEAKMA1
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-251AA
Maximum Pulsed Drain Current (IDM):	4.1 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	500 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	3 ohm

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