Infineon Technologies - IPU60R1K4C6AKMA1

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IPU60R1K4C6AKMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPU60R1K4C6AKMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
Datasheet IPU60R1K4C6AKMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 26 mJ
Other Names: 2156-IPU60R1K4C6AKMA1
SP001292874
IFEINFIPU60R1K4C6AKMA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-251AA
Maximum Pulsed Drain Current (IDM): 8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.4 ohm
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