Infineon Technologies - IPU60R950C6BKMA1

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IPU60R950C6BKMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPU60R950C6BKMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE; JESD-30 Code: R-PSIP-T3;
Datasheet IPU60R950C6BKMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 46 mJ
Other Names: SP000931532
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-251AA
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .95 ohm
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