IPW50R350CPFKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPW50R350CPFKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 10 A; Transistor Element Material: SILICON;
Datasheet	IPW50R350CPFKSA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	22 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.35 ohm
Avalanche Energy Rating (EAS):	246 mJ
Other Names:	INFINFIPW50R350CPFKSA1 IPW50R350CP-ND SP000301164 2156-IPW50R350CPFKSA1-IT IPW50R350CP
JEDEC-95 Code:	TO-247AD
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified

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