Infineon Technologies - IPW60R190P6FKSA1

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IPW60R190P6FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPW60R190P6FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
Datasheet IPW60R190P6FKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 419 mJ
Other Names: IPW60R190P6
INFINFIPW60R190P6FKSA1
IPW60R190P6-ND
SP001017090
2156-IPW60R190P6FKSA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-247
Maximum Pulsed Drain Current (IDM): 57 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .19 ohm
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