Infineon Technologies - IPW65R190E6FKSA1

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IPW65R190E6FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPW65R190E6FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 650 V; Avalanche Energy Rating (EAS): 485 mJ;
Datasheet IPW65R190E6FKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 485 mJ
Other Names: IPW65R190E6-ND
2156-IPW65R190E6FKSA1-IT
IPW65R190E6
INFINFIPW65R190E6FKSA1
SP000863906
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
JEDEC-95 Code: TO-247
Maximum Pulsed Drain Current (IDM): 66 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .19 ohm
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