Infineon Technologies - IPW90R800C3FKSA1

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IPW90R800C3FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPW90R800C3FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 15 A;
Datasheet IPW90R800C3FKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.9 A
Maximum Pulsed Drain Current (IDM): 15 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 157 mJ
Other Names: 2156-IPW90R800C3FKSA1-IT
IFEINFIPW90R800C3FKSA1
IPW90R800C3
IPW90R800C3-ND
SP000413758
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
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