Infineon Technologies - IPZ60R099P6FKSA1

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IPZ60R099P6FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPZ60R099P6FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 600 V; Maximum Drain-Source On Resistance: .099 ohm;
Datasheet IPZ60R099P6FKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 796 mJ
Other Names: SP001313882
2156-IPZ60R099P6FKSA1
ROCINFIPZ60R099P6FKSA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 109 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .099 ohm
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