IRF8910GTRPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF8910GTRPBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 8; JEDEC-95 Code: MS-012AA;
Datasheet	IRF8910GTRPBF Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	19 mJ
Other Names:	IRF8910GTRPBFCT IRF8910GTRPBFDKR IRF8910GTRPBFTR SP001575420 IRF8910GTRPBF-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
JEDEC-95 Code:	MS-012AA
Maximum Pulsed Drain Current (IDM):	82 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0134 ohm
Moisture Sensitivity Level (MSL):	1

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