Infineon Technologies - IRFH7885TRPBF

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IRFH7885TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH7885TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0039 ohm; Minimum DS Breakdown Voltage: 80 V;
Datasheet IRFH7885TRPBF Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 202 mJ
Other Names: IRFH7885TRPBFCT
IRFH7885TRPBFTR
IRFH7885TRPBFDKR
SP001556346
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 250 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0039 ohm
Moisture Sensitivity Level (MSL): 1
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