Infineon Technologies - SIGC84T120R3LEX1SA7

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SIGC84T120R3LEX1SA7 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC84T120R3LEX1SA7
Description N-Channel; Maximum VCEsat: 2.1 V; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum Operating Temperature: -55 Cel;
Datasheet SIGC84T120R3LEX1SA7 Datasheet
NAME DESCRIPTION
Other Names: SIGC84T120R3LE
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.1 V
Minimum Operating Temperature: -55 Cel
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