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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPA12N50C3XKSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; |
| Datasheet | SPA12N50C3XKSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 11.6 A |
| Maximum Pulsed Drain Current (IDM): | 34.8 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .38 ohm |
| Avalanche Energy Rating (EAS): | 340 mJ |
| Other Names: |
SP000216322 SPA12N50C3IN-NDR SPA12N50C3 SPA12N50C3IN-ND SPA12N50C3X SPA12N50C3XK SPA12N50C3XTIN SPA12N50C3IN SPA12N50C3XTIN-ND |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
