SPB03N60C3ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPB03N60C3ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.4 ohm; Maximum Pulsed Drain Current (IDM): 9.6 A; Operating Mode: ENHANCEMENT MODE;
Datasheet	SPB03N60C3ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.2 A
Maximum Pulsed Drain Current (IDM):	9.6 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.4 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	100 mJ
Other Names:	SPB03N60C3ATMA1TR SPB03N60C3INCT-NDR SPB03N60C3INDKR SPB03N60C3 SPB03N60C3INTR SPB03N60C3INTR-ND SPB03N60C3ATMA1DKR SPB03N60C3INDKR-ND SPB03N60C3ATMA1CT SPB03N60C3INCT 2156-SPB03N60C3ATMA1-ITTR SPB03N60C3XT SPB03N60C3XTINCT-ND SPB03N60C3XTINTR-ND SPB03N60C3XTINTR SPB03N60C3INCT-ND SP000013517 SPB03N60C3XTINCT INFINFSPB03N60C3ATMA1 SPB03N60C3INTR-NDR
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH VOLTAGE

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