SPB03N60S5ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPB03N60S5ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V;
Datasheet	SPB03N60S5ATMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.2 A
Maximum Pulsed Drain Current (IDM):	5.7 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1.4 ohm
Avalanche Energy Rating (EAS):	100 mJ
Other Names:	SPB03N60S5INDKR-ND SPB03N60S5ATMA1TR SPB03N60S5INDKR SPB03N60S5INCT SPB03N60S5 SP000012341 SPB03N60S5INTR SPB03N60S5INCT-ND SPB03N60S5XT SPB03N60S5-ND SPB03N60S5ATMA1DKR SPB03N60S5ATMA1CT SPB03N60S5INTR-ND
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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