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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPB08P06PGATMA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | SPB08P06PGATMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 8.8 A |
| Maximum Pulsed Drain Current (IDM): | 35.2 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .3 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 70 mJ |
| Other Names: |
SPB08P06PGATMA1CT SPB08P06PGINDKR-ND SPB08P06PGINCT SPB08P06PGINCT-ND IFEINFSPB08P06PGATMA1 2156-SPB08P06PGATMA1 SPB08P06PGINTR SPB08P06PGATMA1TR SPB08P06PGXT SPB08P06PGINTR-ND SP000102179 SPB08P06P G-ND SPB08P06P G SPB08P06PGATMA1DKR SPB08P06PGINDKR |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
