SPB80N06S08ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPB80N06S08ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 80 A; Case Connection: DRAIN;
Datasheet	SPB80N06S08ATMA1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	700 mJ
Other Names:	SP000084808 SPB80N06S-08-ND SPB80N06S-08 SPB80N06S08 448-SPB80N06S08ATMA1TR SP000054056 SPB80N06S08ATMA1TR-ND SPB80N06S08ATMA1TR SPB80N06S08T
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	80 A
JEDEC-95 Code:	TO-263AB
Maximum Pulsed Drain Current (IDM):	320 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	2
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0077 ohm

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