Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPD03N50C3BTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | SPD03N50C3BTMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 3.2 A |
| Maximum Pulsed Drain Current (IDM): | 9.6 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 1.4 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 100 mJ |
| Other Names: |
SPD03N50C3INCT-ND SPD03N50C3BTMA1DKR SPD03N50C3INDKR SPD03N50C3INDKR-ND SPD03N50C3INTR SPD03N50C3BTMA1-ND SPD03N50C3BTMA1TR SPD03N50C3XT-ND SP000307392 SPD03N50C3INCT SPD03N50C3XT SPD03N50C3 SPD03N50C3INTR-ND SPD03N50C3BTMA1CT |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
