SPD06N60C3BTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPD06N60C3BTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 1; Package Shape: RECTANGULAR;
Datasheet	SPD06N60C3BTMA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.2 A
Maximum Pulsed Drain Current (IDM):	18.6 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.75 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	200 mJ
Other Names:	SPD06N60C3BTMA1TR INFINFSPD06N60C3BTMA1 SPD06N60C3INCT-ND SPD06N60C3INTR-ND SPD06N60C3BTMA1CT SP000307394 SPD06N60C3XT SPD06N60C3INCT SPD06N60C3INDKR-ND SPD06N60C3-ND SPD06N60C3 SPD06N60C3BTMA1DKR SPD06N60C3INDKR SPD06N60C3INTR 2156-SPD06N60C3BTMA1
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	HIGH VOLTAGE

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