Infineon Technologies - SPD08N50C3BTMA1

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SPD08N50C3BTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD08N50C3BTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 10; Maximum Pulsed Drain Current (IDM): 22.8 A;
Datasheet SPD08N50C3BTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.6 A
Maximum Pulsed Drain Current (IDM): 22.8 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .6 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 230 mJ
Other Names: SPD08N50C3XTINTR-ND
SPD08N50C3BTMA1-ND
SPD08N50C3INDKR-ND
SPD08N50C3XT
SPD08N50C3INCT
SPD08N50C3INTR
SPD08N50C3INCT-ND
SPD08N50C3
SPD08N50C3XTINTR
SPD08N50C3XTINCT-ND
SPD08N50C3BTMA1DKR
SPD08N50C3INTR-ND
SPD08N50C3INDKR
SPD08N50C3INCT-NDR
SPD08N50C3BTMA1CT
SPD08N50C3INTR-NDR
SP000307395
SPD08N50C3BTMA1TR
SPD08N50C3XTINCT
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
Peak Reflow Temperature (C): 260
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