Infineon Technologies - SPD30N03S2L07GBTMA1

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SPD30N03S2L07GBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD30N03S2L07GBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 250 mJ; Operating Mode: ENHANCEMENT MODE;
Datasheet SPD30N03S2L07GBTMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 250 mJ
Other Names: SPD30N03S2L-07 G-ND
SPD30N03S2L-07 G
2156-SPD30N03S2L07GBTMA1-ITTR
SP000443922
SPD30N03S2L07GBTMA1TR
IFEINFSPD30N03S2L07GBTMA1
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 30 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 120 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0098 ohm
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