Infineon Technologies - SPD50N03S2L06GBTMA1

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SPD50N03S2L06GBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD50N03S2L06GBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ; Package Body Material: PLASTIC/EPOXY;
Datasheet SPD50N03S2L06GBTMA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 250 mJ
Other Names: SPD50N03S2L06GBTMA1TR
SPD50N03S2L-06 GCT-ND
SPD50N03S2L-06 GDKR
IFEINFSPD50N03S2L06GBTMA1
SPD50N03S2L-06 GTR-ND
SPD50N03S2L-06 G-ND
SPD50N03S2L-06 GCT
SPD50N03S2L06GBTMA1DKR
2156-SPD50N03S2L06GBTMA1
SPD50N03S2L-06 GDKR-ND
SP000443924
SPD50N03S2L-06 G
SPD50N03S2L06G
SPD50N03S2L06GBTMA1CT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 50 A
JEDEC-95 Code: TO-252AA
Maximum Pulsed Drain Current (IDM): 200 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0092 ohm
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