Infineon Technologies - SPI07N65C3HKSA1

SPI07N65C3HKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPI07N65C3HKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 21.9 A; Avalanche Energy Rating (EAS): 230 mJ;
Datasheet SPI07N65C3HKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 230 mJ
Other Names: SP000014632
SPI07N65C3XK
SPI07N65C3IN
SPI07N65C3IN-ND
SPI07N65C3X
SPI07N65C3
SPI07N65C3-ND
SP000680982
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7.3 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 21.9 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Drain-Source On Resistance: .0006 ohm
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