Infineon Technologies - SPI11N65C3XKSA1

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SPI11N65C3XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPI11N65C3XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; JESD-30 Code: R-PSIP-T3; Terminal Form: THROUGH-HOLE;
Datasheet SPI11N65C3XKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 340 mJ
Other Names: SPI11N65C3-ND
SPI11N65C3X
SPI11N65C3IN-ND
SP000680994
SPI11N65C3
SPI11N65C3IN
SPI11N65C3XK
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 33 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Drain-Source On Resistance: .38 ohm
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