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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPI20N65C3XKSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 650 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | SPI20N65C3XKSA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 690 mJ |
| Other Names: |
SP000681010 SPI20N65C3IN SPI20N65C3-ND SPI20N65C3IN-ND IFEINFSPI20N65C3XKSA1 SPI20N65C3X SPI20N65C3XK 2156-SPI20N65C3XKSA1-IT SP000014525 SPI20N65C3 |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 20.7 A |
| JEDEC-95 Code: | TO-262AA |
| Maximum Pulsed Drain Current (IDM): | 62.1 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 650 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED |
| Maximum Drain-Source On Resistance: | .19 ohm |
