Infineon Technologies - SPLBG81

  1. Home
  2. Infineon Technologies - SPLBG81
SPLBG81 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SPLBG81
Description LASER DIODE; Spectral Bandwidth: 4 m; Semiconductor Material: InGaAs/GaAs; Peak Wavelength (nm): 808;
Datasheet SPLBG81 Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 808
Spectral Bandwidth: 4 m
Semiconductor Material: InGaAs/GaAs
Sub-Category: Laser Diodes
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NX8570SC425-BA-A by Renesas Electronics

NX8570SC425-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1542;
NX8570SC737-BA by Renesas Electronics

NX8570SC737-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1574; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
NX8563LF358-BA-A by Renesas Electronics

NX8563LF358-BA-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
NX8570SC6087Q-BA by Renesas Electronics

NX8570SC6087Q-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8563LB549 by Renesas Electronics

NX8563LB549

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs;
NX8565LE870-CC by Renesas Electronics

NX8565LE870-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .1 A;
SDL3038-011 by Onsemi

SDL3038-011

Onsemi

SDL3038-011 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser technology in various industries.
SFH484501 by Infineon Technologies

SFH484501

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: 11 A; Nominal Output Power: 5000 W; Minimum Operating Temperature: 5 Cel; Maximum Operating Temperature: 60 Cel;
NX8571SC602-BA by Renesas Electronics

NX8571SC602-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
54-00164 by Lumentum Operations

54-00164

Lumentum Operations

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Spectral Bandwidth: 3 m; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 50 Cel;
NX8563LF921-BA-A by Renesas Electronics

NX8563LF921-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1592; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel;
TOLD321BBB by Toshiba

TOLD321BBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs;
NX6504GJ-A by Renesas Electronics

NX6504GJ-A

Renesas Electronics

LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); No. of Functions: 1; Peak Wavelength (nm): 1550; Maximum Threshold Current: 25 mA; Shape: ROUND;
NX8571SC610-BA-A by Renesas Electronics

NX8571SC610-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
SDL3144-001 by Onsemi

SDL3144-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel;
STH91004G by Infineon Technologies

STH91004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A; Minimum Operating Temperature: 0 Cel;
NX8570SC618D-BA-AZ by Renesas Electronics

NX8570SC618D-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1561; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
NX8570SC315-BA by Renesas Electronics

NX8570SC315-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1531; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
DL-LS1017 by Onsemi

DL-LS1017

Onsemi

DL-LS1017 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and max operating temp of 60 °C. Ideal for applications requiring through hole mounting, it operates b/w -10°C to 60°C and has a max forward voltage of 3.5V.
SDL3030-001 by Onsemi

SDL3030-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 65 Cel;