Infineon Technologies - SPP11N60CFDXKSA1

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SPP11N60CFDXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP11N60CFDXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; Package Shape: RECTANGULAR; No. of Terminals: 3;
Datasheet SPP11N60CFDXKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 340 mJ
Other Names: SPP11N60CFDXKSA1-ND
448-SPP11N60CFDXKSA1
SP000681042
SPP11N60CFD-ND
SPP11N60CFDIN-ND
SPP11N60CFDIN
SPP11N60CFDX
SPP11N60CFDXK
SPP11N60CFD
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 11 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 28 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .44 ohm
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