Infineon Technologies - SPP15P10PLGHKSA1

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SPP15P10PLGHKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP15P10PLGHKSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON;
Datasheet SPP15P10PLGHKSA1 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 230 mJ
Other Names: SPP15P10PL G-ND
SP000212234
SPP15P10PL G
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 15 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 60 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Maximum Drain-Source On Resistance: .2 ohm
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