Infineon Technologies - SPP18P06PHKSA1

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SPP18P06PHKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP18P06PHKSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: .13 ohm; JESD-30 Code: R-PSFM-T3;
Datasheet SPP18P06PHKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 18.6 A
Maximum Pulsed Drain Current (IDM): 74.4 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .13 ohm
Avalanche Energy Rating (EAS): 150 mJ
Other Names: SPP18P06PIN-NDR
SP000012300
SPP18P06PXK
SPP18P06PXTIN-ND
SPP18P06PIN-ND
SPP18P06PXTIN
SPP18P06PX
SPP18P06P
SPP18P06PIN
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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