Infineon Technologies - SPP24N60C3HKSA1

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SPP24N60C3HKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP24N60C3HKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .16 ohm;
Datasheet SPP24N60C3HKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 24.3 A
Maximum Pulsed Drain Current (IDM): 72.9 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .16 ohm
Avalanche Energy Rating (EAS): 780 mJ
Other Names: SPP24N60C3X
SPP24N60C3-ND
SPP24N60C3IN
SPP24N60C3XK
SPP24N60C3
SPP24N60C3IN-ND
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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