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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPU03N60C3BKMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JESD-30 Code: R-PSIP-T3; Minimum DS Breakdown Voltage: 600 V; |
| Datasheet | SPU03N60C3BKMA1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.2 A |
| Maximum Pulsed Drain Current (IDM): | 9.6 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 1.4 ohm |
| Avalanche Energy Rating (EAS): | 100 mJ |
| Other Names: |
SPU03N60C3 SP000095849 SPU03N60C3-ND 2156-SPU03N60C3BKMA1 INFINFSPU03N60C3BKMA1 |
| JEDEC-95 Code: | TO-251AA |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 600 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
