Infineon Technologies - SPW12N50C3FKSA1

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SPW12N50C3FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPW12N50C3FKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 34.8 A; Additional Features: AVALANCHE RATED, HIGH VOLTAGE;
Datasheet SPW12N50C3FKSA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 11.6 A
Maximum Pulsed Drain Current (IDM): 34.8 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .38 ohm
Avalanche Energy Rating (EAS): 340 mJ
Other Names: SP000014469
2156-SPW12N50C3FKSA1-IT
SPW12N50C3XK
SPW12N50C3IN
SPW12N50C3XTIN
SPW12N50C3XTIN-ND
SPW12N50C3IN-ND
SPW12N50C3IN-NDR
SPW12N50C3X
SPW12N50C3
IFEINFSPW12N50C3FKSA1
JEDEC-95 Code: TO-247AD
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
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