Infineon Technologies - SSIR63250

  1. Home
  2. Infineon Technologies - SSIR63250
SSIR63250 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SSIR63250
Description Other Diodes;
Datasheet SSIR63250 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BAT14-022R by Infineon Technologies

BAT14-022R

Infineon Technologies

Other Diodes; Surface Mount: YES; Maximum Operating Frequency: 4 GHz; Minimum Tangential Signal Sensitivity: 48 dBm; Maximum Impedance: 500 ohm; Minimum Impedance: 350 ohm;
BZX84C3V6TS by Diodes Incorporated

BZX84C3V6TS

Diodes Incorporated

Other Diodes; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Maximum Power Dissipation: .2 W; Maximum Reverse Current: 5 uA;
SIOV-S20S250BR7 by Infineon Technologies

SIOV-S20S250BR7

Infineon Technologies

Other Diodes;
NV039D14 by Renesas Electronics

NV039D14

Renesas Electronics

Other Diodes;
T-ICTE10 by STMicroelectronics

T-ICTE10

STMicroelectronics

Other Diodes;
HN2S05FU(TE85L) by Toshiba

HN2S05FU(TE85L)

Toshiba

Other Diodes; Surface Mount: YES; Reverse Test Voltage: 10 V; Maximum Reverse Current: 20 uA; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage (VF): .3 V;
V270SM22 by Renesas Electronics

V270SM22

Renesas Electronics

Other Diodes;
BAW56S/T3 by NXP Semiconductors

BAW56S/T3

NXP Semiconductors

BAW56S/T3 by NXP Semiconductors is a surface mount diode ideal for high-frequency applications. It features a max reverse recovery time of 0.004 µs, operates b/w -65 °C to 150 °C, and supports up to 90 V peak reverse voltage. Perfect for signal processing and switching circuits.
BAS28W-E6433 by Infineon Technologies

BAS28W-E6433

Infineon Technologies

Other Diodes; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 85 V; Maximum Reverse Current: 50 uA; Maximum Forward Voltage (VF): .715 V; Maximum Power Dissipation: .25 W;
SBL803A by Onsemi

SBL803A

Onsemi

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 4 V; Maximum Output Current: .03 A; Technology: SCHOTTKY; Maximum Forward Voltage (VF): 1.1 V;
1N4734B by Diodes Incorporated

1N4734B

Diodes Incorporated

Other Diodes;
SIOV-CN1812M4G by Infineon Technologies

SIOV-CN1812M4G

Infineon Technologies

Other Diodes;
IDP45E060 by Infineon Technologies

IDP45E060

Infineon Technologies

Other Diodes;
BZX84C5V6TS by Diodes Incorporated

BZX84C5V6TS

Diodes Incorporated

Other Diodes; Surface Mount: YES; Maximum Reverse Current: 1 uA; Maximum Operating Temperature: 150 Cel; Maximum Forward Voltage (VF): .9 V; Minimum Operating Temperature: -65 Cel;
HN2D03F(TE85L,F) by Toshiba

HN2D03F(TE85L,F)

Toshiba

Other Diodes; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 420 V; Reverse Test Voltage: 400 V; Maximum Forward Voltage (VF): 1.3 V; Minimum Operating Temperature: -55 Cel;
BYV541-200 by STMicroelectronics

BYV541-200

STMicroelectronics

BYV541-200 by STMicroelectronics is a diode with 0.06us reverse recovery time, 50uA reverse current, and 200V reverse test voltage. It operates b/w -40 °C to 150°C and has a max forward voltage of 1.2V. Ideal for applications requiring high-speed switching and low power consumption.
1N4761B by Diodes Incorporated

1N4761B

Diodes Incorporated

Other Diodes;
BAS125-07W-E6327 by Infineon Technologies

BAS125-07W-E6327

Infineon Technologies

Other Diodes; Surface Mount: YES; Maximum Forward Voltage (VF): .4 V; Moisture Sensitivity Level (MSL): 1; Maximum Reverse Current: .15 uA; Reverse Test Voltage: 25 V;
PBDF1010 by Diodes Incorporated

PBDF1010

Diodes Incorporated

Other Diodes;
FC807 by Onsemi

FC807

Onsemi

FC807 by Onsemi is a surface mount diode with a max reverse recovery time of 0.008 us, max reverse current of 0.1 uA, and max repetitive peak reverse voltage of 80 V. It is used in applications requiring low forward voltage drop and high reverse test voltage capabilities.