International Rectifier - IRF6646TR1PBF

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IRF6646TR1PBF by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRF6646TR1PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0095 ohm; Minimum DS Breakdown Voltage: 80 V; JESD-609 Code: e4;
Datasheet IRF6646TR1PBF Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 96 A
Surface Mount: YES
Terminal Finish: SILVER NICKEL
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0095 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 230 mJ
Other Names: IRF6646TR1PBFCT
IRF6646TR1PBFTR
IRF6646TR1PBFDKR
SP001563466
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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