Micron Technology - MT42L64M32D1KL-25IT:A

  1. Home
  2. Micron Technology - MT42L64M32D1KL-25IT:A
MT42L64M32D1KL-25IT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT42L64M32D1KL-25IT:A
Description LPDDR2 DRAM; Package Code: VFBGA; Self Refresh: YES; Minimum Supply Voltage (Vsup): 1.14 V; Memory Density: 2147483648 bit; Maximum Supply Voltage (Vsup): 1.3 V;
Datasheet MT42L64M32D1KL-25IT:A Datasheet
NAME DESCRIPTION
Organization: 64MX32
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Seated Height: .8 mm
Access Mode: SINGLE BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.14 V
No. of Words: 67108864 words
Technology: CMOS
Operating Mode: SYNCHRONOUS
Package Code: VFBGA
Width: 12 mm
Other Names: MT42L64M32D1KL-25 IT:A-ND
MT42L64M32D1KL-25IT:A
No. of Ports: 1
Memory Density: 2147483648 bit
Self Refresh: YES
Memory IC Type: LPDDR2 DRAM
Memory Width: 32
No. of Functions: 1
Length: 12 mm
Maximum Access Time: 5.5 ns
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.2
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Pitch: .5 mm
Maximum Supply Voltage (Vsup): 1.3 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AS4C4M16SA-6BIN by Alliance Memory

AS4C4M16SA-6BIN

Alliance Memory

Alliance Memory's AS4C4M16SA-6BIN is a 3.3V, 4MX16 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode, operates at -40 to 85°C, and has a memory density of 67108864 bits.
S27KS0642GABHB020 by Infineon Technologies

S27KS0642GABHB020

Infineon Technologies

Infineon's S27KS0642GABHB020 DRAM features 8MX8 organization, operates at 200MHz with 1.7-1.8V supply voltage. Suitable for applications requiring high-speed synchronous memory in automotive electronics and industrial control systems.
K4S561632E-UC75 by Samsung

K4S561632E-UC75

Samsung

Samsung's K4S561632E-UC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT48LC4M32B2P-6A:LTR by Micron Technology

MT48LC4M32B2P-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.
M378B5773DH0-CH9 by Samsung

M378B5773DH0-CH9

Samsung

Samsung M378B5773DH0-CH9 DDR DRAM offers 256MX64 organization, operates at 667 MHz clock frequency, and has a memory width of 64. Ideal for applications requiring high-speed data processing and large memory capacity in microelectronic assemblies.
M471B5173QH0-YK0 by Samsung

M471B5173QH0-YK0

Samsung

Samsung M471B5173QH0-YK0 DDR DRAM Module features 512MX64 organization, 1.35V nominal voltage, and 512M words code. Ideal for applications requiring high memory density and single bank page burst access mode in microelectronic assemblies.
IS42S16160J-7BL-TR by Integrated Silicon Solution

IS42S16160J-7BL-TR

Integrated Silicon Solution

IS42S16160J-7BL-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
IS42S32400F-7TLI-TR by Integrated Silicon Solution

IS42S32400F-7TLI-TR

Integrated Silicon Solution

IS42S32400F-7TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.
MT40A1G16TB-062EIT:F by Micron Technology

MT40A1G16TB-062EIT:F

Micron Technology

Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A512M16LY-062EAUT:E by Micron Technology

MT40A512M16LY-062EAUT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.
MT48LC16M16A2B4-6AAIT:G by Micron Technology

MT48LC16M16A2B4-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.
MT48LC16M16A2P-7EAIT:G by Micron Technology

MT48LC16M16A2P-7EAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.
MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
MT47H64M16HR-3L:H by Micron Technology

MT47H64M16HR-3L:H

Micron Technology

MT47H64M16HR-3L:H by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and consumes up to 230 mA. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M366S1654ETS-C7A by Samsung

M366S1654ETS-C7A

Samsung

Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR

Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MSM5416273-50GS-K by Lapis Semiconductor

MSM5416273-50GS-K

Lapis Semiconductor

MSM5416273-50GS-K by Lapis Semiconductor is a 256Kx16 DRAM with synchronous operation at 5V. It features fast page access mode, 50ns max access time, and video DRAM memory IC type. Ideal for applications requiring high-speed data storage in commercial temperature environments.
MT48LC8M16A2TG-75:G by Micron Technology

MT48LC8M16A2TG-75:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. Ideal for commercial applications, it offers 4096 refresh cycles and supports sequential burst lengths of 1,2,4,8.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
M471A1K43CB1-CRC by Samsung

M471A1K43CB1-CRC

Samsung

Samsung's M471A1K43CB1-CRC DDR DRAM Module features 1GX64 organization, 64-bit memory width, and 68719476736-bit memory density. Ideal for applications requiring synchronous operation, it has a nominal voltage of 1.2V and operates in a temperature range of 0-85°C.