NXP Semiconductors - 934067694115

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934067694115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067694115
Description RF Small Signal Bipolar Transistors;
Datasheet 934067694115 Datasheet
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SD1229-1 by STMicroelectronics

SD1229-1

STMicroelectronics

NPN; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Transistor Element Material: SILICON;
MPS5179RLRPG by Onsemi

MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.
CA3146E by Harris Semiconductor

CA3146E

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;
BLW32 by Asi Semiconductor

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
934067697215 by NXP Semiconductors

934067697215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
KSP10 by Onsemi

KSP10

Onsemi

The Onsemi KSP10 is an NPN BJT transistor with a max VCEsat of 0.5V and fT of 650MHz. It is used in RF applications due to its ultra-high frequency band, with a max collector-emitter voltage of 25V and power dissipation of 1W.
2N5583 by Tt Electronics Plc

2N5583

Tt Electronics Plc

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Qualification: Not Qualified; No. of Terminals: 3;
934064615115 by NXP Semiconductors

934064615115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .07 A; Additional Features: LOW NOISE;
MPSH10 by Fairchild Semiconductor

MPSH10

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFR93AW by Temic Semiconductors

BFR93AW

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
934059125115 by NXP Semiconductors

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
BSX39 by STMicroelectronics

BSX39

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;
LM3146N by National Semiconductor

LM3146N

National Semiconductor

LM3146N by National Semiconductor is an NPN BJT with 5 elements and 14 terminals. It operates in the very high-frequency band up to 500 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 30V and max collector current of 0.05A, it offers complex configuration in a rectangular package suitable for through-hole mounting.
MSC80196 by STMicroelectronics

MSC80196

STMicroelectronics

STMicroelectronics' MSC80196 is an NPN BJT transistor with a min hFE of 15, ideal for amplifier applications in the L Band. With a max fT of 3200 MHz and IC of 0.5 A, it operates at temperatures up to 200 °C. This surface-mount transistor has a metal-sealed co-fired ceramic package body and flat terminals.
CA3083M96 by Renesas Electronics

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.
934065992115 by NXP Semiconductors

934065992115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
BFP540FESDH6327XTSA1 by Infineon Technologies

BFP540FESDH6327XTSA1

Infineon Technologies

BFP540FESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.08A IC, and 30GHz fT. It is used in S Band amplifiers for high-frequency applications. The package is small outline, surface mountable with flat terminals, suitable for AEC-Q101 standards.
HFA3101BZ96 by Renesas Electronics

HFA3101BZ96

Renesas Electronics

HFA3101BZ96 by Renesas Electronics is an NPN bipolar junction transistor (BJT) designed for amplifier applications in the ultra high frequency band. With a max operating temperature of 150°C and a max collector-emitter voltage of 8V, it offers a nominal transition frequency of 10,000 MHz.
934067707235 by NXP Semiconductors

934067707235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
NSVF5490SKT3G by Onsemi

NSVF5490SKT3G

Onsemi

NSVF5490SKT3G by Onsemi is a NPN BJT transistor with 90 min hFE, 8000 MHz fT, and L Band frequency range. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs in automotive electronics (AEC-Q101).