NXP Semiconductors - 934067694135

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934067694135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067694135
Description RF Small Signal Bipolar Transistors;
Datasheet 934067694135 Datasheet
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2N3866 by Tt Electronics Plc

2N3866

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; JEDEC-95 Code: TO-205AD;
EC3H02BA by Onsemi

EC3H02BA

Onsemi

The Onsemi EC3H02BA is an NPN RF BJT with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.1W, min DC current gain of 120, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 5000MHz requiring low collector current at 0.07A.
934059125115 by NXP Semiconductors

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
BF959RLRM by Onsemi

BF959RLRM

Onsemi

BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.
BFY90 by Tt Electronics Plc

BFY90

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: O-MBCY-W4;
NSVMMBTH10LT1G by Onsemi

NSVMMBTH10LT1G

Onsemi

NSVMMBTH10LT1G by Onsemi is an NPN RF BJT with 650MHz fT, 60 hFE, and 0.3W Pd. Ideal for high-frequency applications in surface-mount configurations due to its 150°C max operating temp and matte tin terminal finish.
MMPQ2369 by Onsemi

MMPQ2369

Onsemi

The Onsemi MMPQ2369 is a NPN RF BJT with 4 elements, ideal for amplifier applications. It has a hFE of 40, fT of 550 MHz, and can handle up to 0.5A collector current. With a max operating temperature of 150 °C and peak reflow temp of 235°C, it's suitable for high-frequency circuits in small outline packages.
MPSH81RLRE by Onsemi

MPSH81RLRE

Onsemi

MPSH81RLRE by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It operates at a max temp of 150 °C, has a max Vce of 20V, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
BFS17W by NXP Semiconductors

BFS17W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
CPH6003A-TL-E by Sanyo Semiconductor

CPH6003A-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 100;
CA3146E by Rochester Electronics

CA3146E

Rochester Electronics

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER;
AT-41511-TR1G by Broadcom

AT-41511-TR1G

Broadcom

AT-41511-TR1G by Broadcom is an NPN RF BJT transistor with a max fT of 10GHz. It is designed for amplifier applications in the C band, featuring a collector-emitter voltage of 12V and a max power dissipation of 0.225W. This surface-mount transistor has a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.
NSVF6003SB6T1G by Onsemi

NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.
SD1115-2 by STMicroelectronics

SD1115-2

STMicroelectronics

NPN; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
BFQ252 by NXP Semiconductors

BFQ252

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;
BFU550WX by NXP Semiconductors

BFU550WX

NXP Semiconductors

The NXP Semiconductors BFU550WX is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max collector-emitter voltage of 12V, fT of 11GHz, and can handle a max collector current of 0.05A.
BFR106E6327HTSA1 by Infineon Technologies

BFR106E6327HTSA1

Infineon Technologies

BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.
934065992115 by NXP Semiconductors

934065992115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
MSC82100 by STMicroelectronics

MSC82100

STMicroelectronics

STMicroelectronics' MSC82100 is an NPN BJT transistor with a hFE of 15, ideal for amplifier applications in L Band frequencies. With a max operating temp of 200 °C and fT of 1600 MHz, it offers a collector-emitter voltage of 20V and collector current up to 0.2A.
NESG260234-T1 by Nec Compound Semiconductor Devices

NESG260234-T1

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-F3;