NXP Semiconductors - 934067721115

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BB911-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 200; Nominal Diode Capacitance: 55 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB204G-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a 2.5 min capacitance ratio and a cylindrical plastic/epoxy package. With 3 terminals in a common cathode config, it’s ideal for RF tuning applications. Its silicon elements ensure reliable performance in various circuits.

Toshiba 1SV280,H3F Varactor Diode is a single-configured diode with abrupt variable capacitance, suitable for ultra high frequency applications. With a max reverse current of 0.003 uA and nominal capacitance of 4.25 pF, it operates at temperatures up to 125 °C. This surface-mount diode has a min breakdown voltage of 15 V and is ideal for small outline package styles.

BBY39TRL13 by NXP Semiconductors is a surface-mount varactor diode featuring a dual terminal design and a min capacitance ratio of 8. Its compact rectangular package makes it ideal for RF tuning applications. This silicon-based component ensures reliable performance in various electronic circuits.

MMBV609LT1 by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 250 and nominal capacitance of 29 pF, suitable for very high frequency applications. This hyperabrupt diode operates at a max power dissipation of 0.225 W and has a breakdown voltage of 20 V, making it ideal for small outline surface mount designs.

1N4807 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 22 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a max operating temperature of 150 °C.

MMVL2101T1 by Onsemi is a varactor diode with 6.8pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

The Onsemi SVD201 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.9 pF, it has a min breakdown voltage of 27 V and operates at temperatures up to 150 °C. This surface-mount diode in microwave package style is made of gallium arsenide and offers a max power dissipation of 0.2 W.