NXP Semiconductors - 935374082598

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935374082598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935374082598
Description RF Power Bipolar Transistors;
Datasheet 935374082598 Datasheet
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SD1476 by STMicroelectronics

SD1476

STMicroelectronics

SD1476 by STMicroelectronics is a NPN RF BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band, with a max collector-emitter voltage of 40V and max collector current of 25A. The package style is flange mount, making it ideal for surface mount applications.
BLU15/12 by NXP Semiconductors

BLU15/12

NXP Semiconductors

BLU15/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 35W, operates at ultra-high frequencies, and offers a min power gain of 7.8 dB. Its robust design supports high temperatures up to 200 °C.
MZ0921B50Y by NXP Semiconductors

MZ0921B50Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Highest Frequency Band: L BAND; Maximum Operating Temperature: 200 Cel;
2SC2395 by Toshiba

2SC2395

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 5 A;
BLT52-T by NXP Semiconductors

BLT52-T

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
SD1534-01 by STMicroelectronics

SD1534-01

STMicroelectronics

STMicroelectronics' SD1534-01 is an NPN RF BJT transistor with 5.5A IC, 219W Pd, and L Band frequency range. Ideal for amplifier applications, it comes in a plastic/epoxy package with flat terminals and operates up to 200 °C.
SD1542 by STMicroelectronics

SD1542

STMicroelectronics

SD1542 by STMicroelectronics is a NPN RF BJT with 1300W power dissipation, suitable for L Band applications. Featuring a max collector current of 40A and operating temperature of 175 °C, it is designed for high-power RF amplification in various systems. This single configuration transistor has a ceramic-metal-sealed co-fired package ideal for surface mount installations.
2SC2640 by Toshiba

2SC2640

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT;
MRF422 by Asi Semiconductor

MRF422

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;
BLY92A by NXP Semiconductors

BLY92A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): POST/STUD MOUNT; Case Connection: ISOLATED;
PZ2024B20U by NXP Semiconductors

PZ2024B20U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-CDFM-F2;
BLV99 by NXP Semiconductors

BLV99

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
933779950112 by NXP Semiconductors

933779950112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BFR94 by NXP Semiconductors

BFR94

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .15 A; Qualification: Not Qualified;
1214-110M by Microsemi

1214-110M

Microsemi

Microsemi's 1214-110M is a NPN RF Power BJT with 270W power dissipation, suitable for L Band applications. It features a ceramic-metal-sealed co-fired package, flat terminal form, and dual terminal position. Ideal for amplifier circuits requiring up to 8A collector current in high temperature environments up to 200°C.
LLE18040XTRAY by NXP Semiconductors

LLE18040XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;
RZ1214B65YTRAY by NXP Semiconductors

RZ1214B65YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Terminal Form: FLAT; Qualification: Not Qualified;
BLS3135-50 by NXP Semiconductors

BLS3135-50

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 6 A; No. of Elements: 1;
MX1011B430W by NXP Semiconductors

MX1011B430W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Highest Frequency Band: L BAND; Maximum Collector-Emitter Voltage: 20 V;
5962F0721806V9A by Renesas Electronics

5962F0721806V9A

Renesas Electronics

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: UNSPECIFIED;