NXP Semiconductors - 935377832118

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935377832118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935377832118
Description RF Power Bipolar Transistors;
Datasheet 935377832118 Datasheet
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MRF492A by New Jersey Semiconductor Products

MRF492A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A;
AM1214-175 by STMicroelectronics

AM1214-175

STMicroelectronics

STMicroelectronics' AM1214-175 is an NPN RF BJT with 7.3 dB min power gain, ideal for L Band applications. It has a max power dissipation of 330 W and can handle up to 14 A collector current. The transistor is designed for switching purposes in a surface-mount package style with a ceramic-metal sealed co-fired body material.
BFQ293 by NXP Semiconductors

BFQ293

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; No. of Terminals: 3;
PZ1418B30U by NXP Semiconductors

PZ1418B30U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Case Connection: BASE;
BDP948H6433TR by Infineon Technologies

BDP948H6433TR

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;
MSC81325M by STMicroelectronics

MSC81325M

STMicroelectronics

MSC81325M by STMicroelectronics is a NPN RF Power BJT with 24A IC, 880W power dissipation, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package body, single configuration, and flat terminal form. Operating at up to 200 °C, this transistor offers a min hFE of 15 and radial terminal position.
2SC2178 by Toshiba

2SC2178

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT;
2SC1955 by Toshiba

2SC1955

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3; Terminal Form: WIRE;
AM82223-010 by STMicroelectronics

AM82223-010

STMicroelectronics

STMicroelectronics AM82223-010 is an NPN BJT transistor with 6.5 dB min power gain, suitable for amplifier applications in S Band frequencies. It has a max power dissipation of 28 W, operates up to 200 °C, and features a flange mount package style for easy installation.
BLX65ES by NXP Semiconductors

BLX65ES

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .7 A; Package Style (Meter): CYLINDRICAL;
BLV38 by NXP Semiconductors

BLV38

NXP Semiconductors

BLV38 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290 W, operates at very high frequencies, and offers a min power gain of 8 dB. Ideal for demanding RF environments, it ensures reliable performance.
LXE18400X by NXP Semiconductors

LXE18400X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 9 A; JESD-30 Code: R-CDFM-F2;
AM1011-300 by STMicroelectronics

AM1011-300

STMicroelectronics

STMicroelectronics' AM1011-300 is a NPN RF BJT with 1070W power dissipation, suitable for L Band applications. It has a max IC of 36A, hFE of 10, and operates up to 250 °C. The transistor is single-configured, surface-mountable, and features a ceramic-metal-sealed co-fired package.
BLW898 by NXP Semiconductors

BLW898

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;
934045780114 by NXP Semiconductors

934045780114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;
AM1214-100 by STMicroelectronics

AM1214-100

STMicroelectronics

STMicroelectronics' AM1214-100 is a NPN RF BJT transistor with 6 dB min power gain, ideal for L Band applications. It has a max power dissipation of 270 W and can handle up to 13 A collector current. Suitable for switching purposes, this transistor is surface mountable and operates at temperatures up to 250 °C.
PH1214-110M by M/a-com Technology Solutions

PH1214-110M

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
RX1214B150W by NXP Semiconductors

RX1214B150W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Operating Temperature: 200 Cel;
RZ2731B60W by NXP Semiconductors

RZ2731B60W

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 5.7 A; Highest Frequency Band: S BAND;
SD1726 by STMicroelectronics

SD1726

STMicroelectronics

SD1726 by STMicroelectronics is a NPN RF Power BJT with 4 terminals and 55V max collector-emitter voltage. It has a max power dissipation of 233W, making it suitable for high frequency band amplifier applications. With a max operating temp of 200°C, this transistor offers a single configuration in a round package shape for flange mount installation.