NXP Semiconductors - AFM907N

  1. Home
  2. NXP Semiconductors - AFM907N
AFM907N by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number AFM907N
Description RF Power Field-Effect Transistors;
Datasheet AFM907N Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PD55015S-E by STMicroelectronics

PD55015S-E

STMicroelectronics

STMicroelectronics' PD55015S-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 5A Drain Current. The transistor comes in a PLASTIC/EPOXY package, suitable for surface mount with 73W power dissipation capability.
BLF278 by Asi Semiconductor

BLF278

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; No. of Elements: 1;
MW6S010NR1 by Freescale Semiconductor

MW6S010NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Maximum Operating Temperature: 225 Cel; JESD-609 Code: e3;
NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
934061275112 by NXP Semiconductors

934061275112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
STAC2932B by STMicroelectronics

STAC2932B

STMicroelectronics

STAC2932B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.
MRF7P20040HSR3 by NXP Semiconductors

MRF7P20040HSR3

NXP Semiconductors

NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
MRFX1K80NR5 by NXP Semiconductors

MRFX1K80NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
PD60015S by STMicroelectronics

PD60015S

STMicroelectronics

PD60015S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min breakdown voltage, operates in enhancement mode, and supports L-band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
A2T21S260W12NR3 by NXP Semiconductors

A2T21S260W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
BLF6G20-75 by NXP Semiconductors

BLF6G20-75

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Transistor Element Material: SILICON;
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
STAC2942F by STMicroelectronics

STAC2942F

STMicroelectronics

STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
MRF137 by Asi Semiconductor

MRF137

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (Abs) (ID): 5 A; Terminal Form: FLAT;
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
DE475-102N21A by IXYS Corporation

DE475-102N21A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;