NXP Semiconductors - AFM912NT1

  1. Home
  2. NXP Semiconductors - AFM912NT1
AFM912NT1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number AFM912NT1
Description RF Power Field-Effect Transistors;
Datasheet AFM912NT1 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A2T18H160-24SR3 by NXP Semiconductors

A2T18H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD55008-E by STMicroelectronics

PD55008-E

STMicroelectronics

STMicroelectronics' PD55008-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 4A Drain Current. The PLASTIC/EPOXY package has GULL WING terminals, SMALL OUTLINE style, and can handle up to 52.8W power dissipation at 165°C max temperature.
SD56060 by STMicroelectronics

SD56060

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
AFT09H310-03SR6 by Freescale Semiconductor

AFT09H310-03SR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Peak Reflow Temperature (C): 260;
NE5550979A-A by Renesas Electronics

NE5550979A-A

Renesas Electronics

NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
MRF1513NT1 by NXP Semiconductors

MRF1513NT1

NXP Semiconductors

NXP Semiconductors' MRF1513NT1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a 2A Drain Current and 31.2W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
PD57006S by STMicroelectronics

PD57006S

STMicroelectronics

PD57006S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology for efficient integration.
STAP85025 by STMicroelectronics

STAP85025

STMicroelectronics

STAP85025 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
GS61004B-MR by Gan Systems

GS61004B-MR

Gan Systems

GS61004B-MR by Gan Systems is an N-CHANNEL RF FET with 100V DS breakdown voltage, 45A ID, and -55°C min. operating temp. Ideal for SWITCHING applications in ENHANCEMENT MODE, this PLASTIC/EPOXY chip carrier FET offers SOURCE case connection and GOLD over NICKEL terminal finish.
MRF184 by Freescale Semiconductor

MRF184

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; Qualification: Not Qualified;
934064635112 by NXP Semiconductors

934064635112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK;
PD57018S-E by STMicroelectronics

PD57018S-E

STMicroelectronics

PD57018S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2.5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 31.7 W.
STAC2942F by STMicroelectronics

STAC2942F

STMicroelectronics

STAC2942F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and operates in the very high frequency band. Its robust ceramic-metal sealed package ensures reliability in demanding environments.
CGHV37400F by Wolfspeed

CGHV37400F

Wolfspeed

RF Power Field-Effect Transistors;
PTVA101K02EVV1R0XTMA1 by Wolfspeed

PTVA101K02EVV1R0XTMA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
A2T18H455W23NR6 by NXP Semiconductors

A2T18H455W23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
A3G26H502W17SR3 by NXP Semiconductors

A3G26H502W17SR3

NXP Semiconductors

NXP Semiconductors A3G26H502W17SR3 is an N-CHANNEL RF FET with 150V DS breakdown voltage, 11.3 dB power gain, and GaN element material. Primarily used in S Band applications as a depletion mode amplifier with flatpack package style for surface mount assembly.