NXP Semiconductors - BLF182XRS

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BLF182XRS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF182XRS
Description RF Power Bipolar Transistors;
Datasheet BLF182XRS Datasheet
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2SC1001 by Toshiba

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
BLS3135-10,114 by NXP Semiconductors

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SD1414-12 by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates at up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting.
MC3346P by Onsemi

MC3346P

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MC3346P by Onsemi is a NPN BJT with 5 elements, 14 terminals, and fT of 550 MHz. It has a max IC of 0.05 A and VCE of 15 V. Ideal for RF applications due to its high transition frequency and collector current capacity.
BLW77 by NXP Semiconductors

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BLW77 by NXP Semiconductors is a single NPN RF Power BJT with a max power dissipation of 245W. It operates in the very high frequency band, with a max collector-emitter voltage of 35V and max collector current of 12A. Ideal for amplifier applications, this transistor has a nominal transition frequency of 320MHz and can withstand temperatures up to 200°C.
BLU20/12 by NXP Semiconductors

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; No. of Terminals: 6; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
AM0608-200 by STMicroelectronics

AM0608-200

STMicroelectronics

STMicroelectronics' AM0608-200 is an NPN RF BJT with 8.7 dB min power gain, ideal for amplifier applications in the ultra-high frequency band. With a max power dissipation of 875 W and operating temperature up to 250 °C, it features a ceramic-metal-sealed co-fired package body and dual terminal position for efficient performance.
BLT53 by NXP Semiconductors

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3900 MHz; Maximum Power Dissipation (Abs): 35.5 W; Maximum Collector Current (IC): 2.5 A;
PTB20081 by Infineon Technologies

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NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Terminal Position: DUAL;
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
BLS2731-50 by NXP Semiconductors

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 6 A; No. of Terminals: 2;
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 583 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 4;
SD1275-01 by STMicroelectronics

SD1275-01

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STMicroelectronics' SD1275-01 is a NPN RF BJT with 70W power dissipation, 160MHz fT, and 8A IC. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 16V and very high frequency band capability. Package style is flange mount with a round shape and flat terminals.
BLW76 by NXP Semiconductors

BLW76

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 315 MHz; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 8 A;
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PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Body Material: UNSPECIFIED;
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.4 A; Case Connection: BASE;
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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F6;
2SC2642 by Toshiba

2SC2642

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 2.8 A; Transistor Application: AMPLIFIER;
AM1416-220 by STMicroelectronics

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STMicroelectronics AM1416-220 is an NPN RF BJT transistor for amplifier applications. It operates in L Band with a highest frequency band. The package is ceramic-metal-sealed cofired, surface mountable, and has 2 terminals in a rectangular shape suitable for flange mounting.
BLV2042-T by NXP Semiconductors

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; No. of Terminals: 8; Transistor Element Material: SILICON;