NXP Semiconductors - BLF6G27LS-50BN,112

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BLF6G27LS-50BN,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G27LS-50BN,112
Description N-CHANNEL; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 12 A; Maximum Drain Current (ID): 12 A;
Datasheet BLF6G27LS-50BN,112 Datasheet
NAME DESCRIPTION
Other Names: 934064687112
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 12 A
Maximum Drain Current (Abs) (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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