NXP Semiconductors - BLF8G27LS-100

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BLF8G27LS-100 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G27LS-100
Description RF Small Signal Field-Effect Transistors;
Datasheet BLF8G27LS-100 Datasheet
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J309 by NXP Semiconductors

J309

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3; Additional Features: LOW NOISE;
2SK197 by Renesas Electronics

2SK197

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The Renesas Electronics 2SK197 is an N-CHANNEL RF FET with a max drain current of 0.02A, operating in DEPLETION MODE for AMPLIFIER applications. It features GULL WING terminals and operates in the VERY HIGH FREQUENCY BAND, making it suitable for SMALL OUTLINE packages in high-frequency circuits.
BF998R-TAPE-13 by NXP Semiconductors

BF998R-TAPE-13

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BF998R-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device ensures efficient performance in various electronic circuits.
BF545BTRL by NXP Semiconductors

BF545BTRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
BF909A by NXP Semiconductors

BF909A

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY;
2N5486RLRPG by Onsemi

2N5486RLRPG

Onsemi

2N5486RLRPG by Onsemi is an N-CHANNEL RF FET with a power gain of 10 dB, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W and operates in DEPLETION MODE at up to 150 °C, featuring a JUNCTION technology and SILICON element material.
934063127215 by NXP Semiconductors

934063127215

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 3 V; No. of Elements: 1;
BF256ARLRM by Onsemi

BF256ARLRM

Onsemi

BF256ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
2N3823UB by Microchip Technology

2N3823UB

Microchip Technology

2N3823UB by Microchip Technology is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers VERY HIGH FREQUENCY BAND performance. Ideal for applications requiring SMALL OUTLINE packages and SILICON transistor element material, with a max temp of 200 °C.
2N4416 by NXP Semiconductors

2N4416

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Terminals: 4; Maximum Operating Temperature: 175 Cel;
J310RLRA by Onsemi

J310RLRA

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J310RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a DEPLETION MODE and 2.5pF Crss for high performance. Operating at up to 125 °C, this THROUGH-HOLE transistor has a CYLINDRICAL package style.
934054150215 by NXP Semiconductors

934054150215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Case Connection: SOURCE; Terminal Position: DUAL;
BF1212,215 by NXP Semiconductors

BF1212,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;
2N5953 by Onsemi

2N5953

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
J309RLRM by Onsemi

J309RLRM

Onsemi

J309RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and a feedback capacitance of 2.5 pF.
BF556C-TAPE-7 by NXP Semiconductors

BF556C-TAPE-7

NXP Semiconductors

BF556C-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF245ARLRP by Onsemi

BF245ARLRP

Onsemi

BF245ARLRP by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. This THROUGH-HOLE transistor has a max ID of 0.1A and comes in a CYLINDRICAL package shape.
TGF1350SPMX by Texas Instruments

TGF1350SPMX

Texas Instruments

TGF1350SPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.
MMBFJ309LT1 by Onsemi

MMBFJ309LT1

Onsemi

MMBFJ309LT1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at 150 °C max temp. Featuring ULTRA HIGH FREQUENCY BAND, it has a max power dissipation of 0.225W in a SMALL OUTLINE package.
BF1208D by NXP Semiconductors

BF1208D

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 6 V;