NXP Semiconductors - BLM7G1822S-40PBG

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BLM7G1822S-40PBG by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLM7G1822S-40PBG
Description RF Small Signal Field-Effect Transistors;
Datasheet BLM7G1822S-40PBG Datasheet
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2N5486PBFREE by Central Semiconductor

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2N5486PBFREE by Central Semiconductor is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB, operates in DEPLETION MODE, and has a Max Drain Current of 0.03 A. With ULTRA HIGH FREQUENCY BAND compatibility, this transistor is ideal for high-frequency amplification needs.
2N3819 by Allegro MicroSystems

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;
BF990ATRL by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF1211WR,115 by NXP Semiconductors

BF1211WR,115

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N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G4; Qualification: Not Qualified;
2N5486 by Micro Electronics

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Micro Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
934063998115 by NXP Semiconductors

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N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: SWITCHING; Additional Features: LOW NOISE; Minimum DS Breakdown Voltage: 6 V;
MMBFJ310LT1 by Onsemi

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Onsemi

MMBFJ310LT1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Operating in DEPLETION MODE, it's ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. With a max power dissipation of 0.225W and peak reflow temperature of 235°C, this transistor offers high performance in a SMALL OUTLINE package.
BFR84 by NXP Semiconductors

BFR84

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BFR84 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max DS breakdown voltage of 20V and operating in the very high frequency band. It has a dual gate, depletion mode configuration with a max temp of 175 °C. This cylindrical metal package transistor supports up to 0.05A drain current.
934031470115 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; JESD-609 Code: e3; Terminal Position: DUAL;
BF994SA-GS08 by Vishay Telefunken

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
BF904AWRT/R by NXP Semiconductors

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N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF9G20LS-160V by NXP Semiconductors

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ATF-38143-TR1G by Agilent Technologies

ATF-38143-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; Case Connection: SOURCE;
BF909,215 by NXP Semiconductors

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NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .04 A; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;
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3N212 by Texas Instruments

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933754970215 by NXP Semiconductors

933754970215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
J310 by Temic Semiconductors

J310

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
BF908R-TAPE-7 by NXP Semiconductors

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NXP Semiconductors

BF908R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. Ideal for compact surface mount designs, it ensures efficient performance in various electronic circuits.
BLP8G21S-160PV by NXP Semiconductors

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RF Small Signal Field-Effect Transistors;