NXP Semiconductors - BLM8G0710S-45ABG

  1. Home
  2. NXP Semiconductors - BLM8G0710S-45ABG
BLM8G0710S-45ABG by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLM8G0710S-45ABG
Description RF Small Signal Field-Effect Transistors;
Datasheet BLM8G0710S-45ABG Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N5486 by Micro Electronics

2N5486

Micro Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
BF909ATRL13 by NXP Semiconductors

BF909ATRL13

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
3SK265 by Onsemi

3SK265

Onsemi

N-CHANNEL; Maximum Drain Current (Abs) (ID): .03 A; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .2 W;
MMBFJ309LT1 by Onsemi

MMBFJ309LT1

Onsemi

MMBFJ309LT1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at 150 °C max temp. Featuring ULTRA HIGH FREQUENCY BAND, it has a max power dissipation of 0.225W in a SMALL OUTLINE package.
934056333115 by NXP Semiconductors

934056333115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .03 pF; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF184XRS by NXP Semiconductors

BLF184XRS

NXP Semiconductors

BLF184XRS by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage and 22.8 dB Power Gain, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a COMMON SOURCE configuration, METAL-OXIDE SEMICONDUCTOR technology, and FLATPACK package style.
MMBFU310LT1G by Onsemi

MMBFU310LT1G

Onsemi

MMBFU310LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a small outline package style and max power dissipation of 0.225W.
FHX35X by Fujitsu

FHX35X

Fujitsu

Fujitsu's FHX35X is an N-CHANNEL RF FET for AMPLIFIER applications in KU BAND. With 8.5 dB Power Gain, it operates in DEPLETION MODE at 175 °C max temp. Featuring HIGH ELECTRON MOBILITY tech and GALLIUM ARSENIDE material, this SINGLE configuration transistor is a surface mount with 4 terminals.
BLF8G27LS-150GV by NXP Semiconductors

BLF8G27LS-150GV

NXP Semiconductors

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
FLU17XM by Fujitsu Semiconductor America

FLU17XM

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Case Connection: SOURCE; No. of Elements: 1;
BF982 by NXP Semiconductors

BF982

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;
MMBF4416 by Electronic Devices

MMBF4416

Electronic Devices

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;
BLA8G1011LS-300G by NXP Semiconductors

BLA8G1011LS-300G

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
ATF-38143-TR1G by Agilent Technologies

ATF-38143-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; Case Connection: SOURCE;
BLA8G1011L-300 by NXP Semiconductors

BLA8G1011L-300

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF965 by NXP Semiconductors

BF965

NXP Semiconductors

BF965 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max operating temp of 150 °C and a min DS breakdown voltage of 20V. It operates in dual gate depletion mode and supports very high frequency bands. Its compact round package ensures efficient surface mounting.
BF980A by NXP Semiconductors

BF980A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified; Terminal Form: FLAT;
BF245CRLRE by Onsemi

BF245CRLRE

Onsemi

BF245CRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3 (THROUGH-HOLE).
BLF8G20LS-140GV by NXP Semiconductors

BLF8G20LS-140GV

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
ATF-54143-TR1 by Agilent Technologies

ATF-54143-TR1

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: C BAND; Qualification: Not Qualified;