NXP Semiconductors - BLP10H605

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BLP10H605 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP10H605
Description RF Small Signal Field-Effect Transistors;
Datasheet BLP10H605 Datasheet
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BF256A by Onsemi

BF256A

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
BF990AR-T by NXP Semiconductors

BF990AR-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 18 V;
933171550126 by NXP Semiconductors

933171550126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; No. of Terminals: 3; Maximum Drain Current (ID): .025 A;
SHF-0189 by Sirenza Microdevices

SHF-0189

Sirenza Microdevices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Terminals: 3; Terminal Position: SINGLE;
PD57002-E by STMicroelectronics

PD57002-E

STMicroelectronics

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.
J310RLRM by Onsemi

J310RLRM

Onsemi

J310RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and Terminal Finish of TIN LEAD.
ATF-54143-TR2G by Agilent Technologies

ATF-54143-TR2G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: C BAND;
2N3823 by National Semiconductor

2N3823

National Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified;
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
2N3819/D74Z by National Semiconductor

2N3819/D74Z

National Semiconductor

2N3819/D74Z by National Semiconductor is an N-CHANNEL RF FET with 3 terminals. It operates in DEPLETION MODE and has a Max Feedback Capacitance of 4 pF. Ideal for AMPLIFIER applications due to its SILICON element material and CYLINDRICAL package style.
2N4416A by Motorola

2N4416A

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-206AF; Package Shape: ROUND;
SMMBFJ310LT3 by Onsemi

SMMBFJ310LT3

Onsemi

SMMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DEPLETION MODE with a 25V DS Breakdown Voltage and 2.5pF Crss, suitable for ULTRA HIGH FREQUENCY BAND usage. This SMALL OUTLINE transistor has GULL WING terminals and Tin/Lead finish, making it ideal for surface mount configurations.
BF256ARLRE by Onsemi

BF256ARLRE

Onsemi

BF256ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring a SINGLE configuration, such as RF amplifiers and oscillators.
2N5484-AMMO by NXP Semiconductors

2N5484-AMMO

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;
BFW11 by NXP Semiconductors

BFW11

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Case Connection: SHIELD;
MMBFJ310LT3 by Onsemi

MMBFJ310LT3

Onsemi

MMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. It is ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND due to its small outline package and 2.5pF feedback capacitance.
BLF241 by NXP Semiconductors

BLF241

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;
BF908-TAPE-7 by NXP Semiconductors

BF908-TAPE-7

NXP Semiconductors

BF908-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
ATF-54143-TR1 by Broadcom

ATF-54143-TR1

Broadcom

Broadcom's ATF-54143-TR1 is an N-channel RF FET with 15 dB power gain, ideal for amplifier applications in C band. It features a 5V DS breakdown voltage, 0.12A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and high electron mobility technology.
BF513 by NXP Semiconductors

BF513

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Field Effect Transistor Technology: JUNCTION;