NXP Semiconductors - BLP8G20S-80P

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BLP8G20S-80P by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP8G20S-80P
Description RF Small Signal Field-Effect Transistors;
Datasheet BLP8G20S-80P Datasheet
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2SK302-Y by Toshiba

2SK302-Y

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Toshiba's 2SK302-Y is an N-CHANNEL RF FET with a built-in diode, ideal for amplifier applications. Operating in depletion mode, it offers a max drain current of 0.03A and very high frequency band performance. With a package style of small outline and GULL WING terminals, it can handle up to 125°C operating temperature.
BF994SA-GS08 by Vishay Telefunken

BF994SA-GS08

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
ATF-36077-STR by Agilent Technologies

ATF-36077-STR

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
3SK167-4 by Onsemi

3SK167-4

Onsemi

3SK167-4 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring high frequency signal amplification in environments up to 125 °C, such as RF communication systems and radar equipment.
2N5949 by Texas Instruments

2N5949

Texas Instruments

2N5949 by Texas Instruments is an N-CHANNEL RF FET with a min DS Breakdown Voltage of 30V. It operates in DEPLETION MODE, has a Max Power Dissipation of 0.36W, and Max Operating Temperature of 150°C. This transistor is commonly used for SWITCHING applications due to its low feedback capacitance of 2pF.
J308RL by Onsemi

J308RL

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J308RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF245B,126 by NXP Semiconductors

BF245B,126

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BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.
934002660235 by NXP Semiconductors

934002660235

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 2; JESD-30 Code: R-PDSO-G4;
J308 by NXP Semiconductors

J308

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Transistor Application: AMPLIFIER; Package Shape: ROUND;
FLU17XM by Eudyna Devices

FLU17XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
2N5486RLRE by Onsemi

2N5486RLRE

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2N5486RLRE by Onsemi is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB and operates in DEPLETION MODE at up to 150 °C. This ULTRA HIGH FREQUENCY transistor has a Max Drain Current of 0.03 A and Max Feedback Capacitance of 1 pF, making it suitable for high-frequency amplification needs.
BF245B by NXP Semiconductors

BF245B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
BF244ARLRM by Onsemi

BF244ARLRM

Onsemi

BF244ARLRM by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF244B by Fairchild Semiconductor

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Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;
2N3819-E3 by Vishay Intertechnology

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Vishay Intertechnology

2N3819-E3 by Vishay Intertechnology is a P-CHANNEL RF FET with 8V DS Breakdown Voltage. Ideal for ULTRA HIGH FREQ SWITCHING applications, it operates in DEPLETION MODE with 4pF Crss and 0.36W Power Dissipation at 150°C max temp.
NE3515S02-T1C-A by Nec Electronics America

NE3515S02-T1C-A

Nec Electronics America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Maximum Drain Current (ID): .025 A; No. of Elements: 1;
J308RLRA by Onsemi

J308RLRA

Onsemi

J308RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and operates in DEPLETION MODE with a TIN LEAD finish.
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Renesas Electronics

NE3515S02-T1D-A by Renesas is a N-CHANNEL FET with 3V DS Breakdown Voltage, 11 dB Power Gain, and operates in DEPLETION MODE. It is used as an AMPLIFIER in KU BAND applications due to its 0.165W power dissipation and SILICON element material.
BF256ARL by Onsemi

BF256ARL

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BF256ARL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
NE3210S01-T1B by Nec Electronics America

NE3210S01-T1B

Nec Electronics America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;