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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BS108/01,126 |
| Description | Limited Part Number Data; |
| Datasheet | BS108/01,126 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934009850126 BS108/01 AMO-ND BS108/01 AMO |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Category: |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
| FET Type: | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds: | 120 pF @ 25 V |
| Mounting Type: | Through Hole |
| Rds On (Max) @ Id, Vgs: | 5Ohm @ 100mA, 2.8V |
| Vgs(th) (Max) @ Id: | 1.8V @ 1mA |
| Supplier Device Package: | TO-92-3 |
| Standard Package: | 2,000 |
| Drain to Source Voltage (Vdss): | 200 V |
| Power Dissipation (Max): | 1W (Ta) |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Technology: | MOSFET (Metal Oxide) |
| Packaging: | Tape & Box (TB) |
| Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
| Vgs (Max): | ±20V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V |
| Base Product Number: | BS10 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
